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SEMICONDUCTOR
HGTG12N60C3D
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Package
JEDEC STYLE TO-247
E C G
January 1997
Features
* * * * * 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
o
Description
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
PACKAGING AVAILABILITY PART NUMBER HGTG12N60C3D PACKAGE TO-247 BRAND G12N60C3D
E G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49117.
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG12N60C3D 600 24 12 15 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC s s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1997
File Number
4043.1
3-35
HGTG12N60C3D
Electrical Specifications
TC = 25oC, Unless Otherwise Specified LIMITS PARAMETER Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 15 3.0 TYP 25 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 UNITS V V A mA V V V V V
IC = 15A, VGE = 15V
Gate-Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, VGE = 15V, RG = 25, L = 100H
Gate-Emitter Leakage Current Switching SOA
IGES SSOA
VCE(PK) = 480V VCE(PK) = 600V 80 24
-
100 -
nA A A
Gate-Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
7.6 48 62 14 16 270 210 380 900 1.7 34 30 -
55 71 400 275 2.0 42 37 1.2 1.5
V nC nC ns ns ns ns J J V ns ns
oC/W oC/W
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time
tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC trr
TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H
IEC = 12A IEC = 12A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s
-
Thermal Resistance
RJC
IGBT Diode
NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
3-36
HGTG12N60C3D Typical Performance Curves
ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 80 70 60 50 40 TC = 25oC 30 20 10 0 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) TC = -40oC TC = 150oC DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 70 60 50 40 30 20 10 0 0 7.0V 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 7.5V 10 9.0V 8.5V 8.0V 10.0V VGE= 15.0V 12.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
70 60 50 40
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V
ICE, COLLECTOR-EMITTER CURRENT (A)
80
80 70 60 TC = 25oC 50 40 30 20 10 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC
TC = -40oC 30 20 TC = 25oC 10 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TC = 150oC
TC = 150oC
0
1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
20
120 ISC 15 100
15
80 10 60
10
5
tSC 5 10 11 12 13 14 VGE , GATE-TO-EMITTER VOLTAGE (V)
40 20 15
0 25
50
75 100 125 TC , CASE TEMPERATURE (oC)
150
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-37
ISC, PEAK SHORT CIRCUIT CURRENT(A)
25 ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
20
VCE = 360V, RGE = 25, TJ = 125oC
140
HGTG12N60C3D Typical Performance Curves
100 tD(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
400 tD(OFF)I , TURN-OFF DELAY TIME (ns)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 300 VGE = 15V
50
VGE = 10V 200
30
VGE = 10V
20 VGE = 15V
10 5 10 15 20 25 30 ICE , COLLECTOR-EMITTER CURRENT (A)
100 5 10 15 20 25 30 ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V tRI , TURN-ON RISE TIME (ns) 100 VGE = 10V
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
300 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
tFI , FALL TIME (ns)
200 VGE = 10V or 15V
VGE = 15V
10
100 90 80 5 10 15 20 25 30 5 10 15 20 25 30 ICE , COLLECTOR-EMITTER CURRENT (A) ICE , COLLECTOR-EMITTER CURRENT (A)
5
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
2.0 EON , TURN-ON ENERGY LOSS (mJ)
EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
3.0 2.5
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
1.5 VGE = 10V 1.0 VGE = 15V 0.5
2.0 1.5 VGE = 10V or 15V 1.0 0.5 0
0 5 10 15 20 25 30 ICE , COLLECTOR-EMITTER CURRENT (A)
5
10
15
20
25
30
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
3-38
HGTG12N60C3D Typical Performance Curves
200 fMAX , OPERATING FREQUENCY (kHz) 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2 C/W 1 5 10 20 30 ICE, COLLECTOR-EMITTER CURRENT (A)
o
(Continued)
100 ICE, COLLECTOR-EMITTER CURRENT (A) TJ = 150oC, TC = 75oC RG = 25, L = 100H
TJ = 150oC, VGE = 15V, RG = 25, L = 100H
80
60 LIMITED BY CIRCUIT 40
10
20
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500 VCE , COLLECTOR - EMITTER VOLTAGE (V) FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) CIES 600
IG REF = 1.276mA, RL = 50, TC = 25oC 15 VGE, GATE-EMITTER VOLTAGE (V)
480
VCE = 600V
12
1500
360
9
1000
240 VCE = 400V VCE = 200V 120
6
500 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) COES
3
0 0 10 20 30 40 QG , GATE CHARGE (nC) 50 60
0
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGUE 16. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5
0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PD t2 t1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-39
HGTG12N60C3D Typical Performance Curves
50 40 IEC , FORWARD CURRENT (A) tR , RECOVERY TIMES (ns) 40 tRR 30 tA 20 tB 10
(Continued)
TC = 25oC, dIEC/dt = 100A/s
30
100oC
20
150oC
25oC
10
0 0 0.5 1.0 1.5 2.0 2.5 3.0 VEC , FORWARD VOLTAGE (V)
0 0 5 10 15 20 IEC , FORWARD CURRENT (A)
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT
Test Circuit and Waveform
L = 100H RHRP1560 VGE
90% 10% EOFF EON
RG = 25 +
VCE 90% VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
3-40
HGTG12N60C3D Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/ RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400
SEMICONDUCTOR
3-41

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